2SB1481 TOSHIBA
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- Manufacturer or author: Provided By digicamel.com
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Technical content
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE SWITCHING APPLICATIONS Unit in mm 10403 g32#02 27402 © High DC Current Gain Ez 5 : = i = = GF > : hpg=2000 (Min.) (Vog=—2V, I¢=-1.5A) ee eds @ — Low Saturation Voltage : VOR (sat)= —1.5V (Max.) (ig= —3A) E | 2 © Complementary to 26D2241 “| Po F | MAXIMUM RATINGS (Ta =25°C) | | 2 | 0.75+0.15 e CHARACTERISTIC SYMBOL UNIT | | u Collector-Emitter Voltage VCEO | -100 | v_ | | [2 Emitter-Base Voltage VEBO S 3 Collector Current c c A 1. BASE 3. EMITTER [Base Curent | | 08 | A Collector Power Ta=25°C P Ww EIA SC-67 Dissipation Te=25°C c = TOSHIBA 2-10R1A Junction Temperature — Storage Temperature Range —55~150 Weight : 1.78 EQUIVALENT CIRCUIT COLLECTOR BASE 0— ' ok ft! Oo EMITTER 261001 a2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to their inherent electrical Sensitivity and vulnerability to physical stres. itis the responsibilty of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your, designs, please ensure that TOSHIBA. products are, used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibilty is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property Or other rights of the third parties which may result from Its use. ‘NO license Is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-05-06 1/3
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Vep=—100V, Ip=0 | — | — [-20[ za | Emitter Cut-off Current Ippo __|VEp=—5V, Ic=0 | — | — |-25[ ma | Collector-Emitter vo onon tema [Won =a¥. Iga =isn | sooo = ‘urrent Gain hrg(2) _|VoR=—2V, Io=-3A roo] — | — | Collector-Emitter _ _ Base-Emitter se fares fem nnem—[-[ bl Collector-Emitter Switching Tad pur fet 13S . kel Bit iF sm Nant we SE LTSE [Yow] | . —Ip1 =IB2 =6mA Voo> -30V 1997-05-06 2/3
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e st ttt) Peas 5 pL eee ej, Tay | | © eee 2 TT LLL AAR) eee a V 2 -1 Doe ee ene © Eee ee PP A 0 L/\\ a a sr rT COLLECTOR-EMITTER VOLTAGE Vcg (V) BASE-EMITTER VOLTAGE VpE (V) hre - Ic VCE (sat) - Ic “= i eT es oe ee ee sooo} —tre=sore pe as -s E 50007 Te= 100°C po Bo ll Ie/ig=500 2 00 — Yat aN HH aa B z Aosy \\ a eee Nt a PT Lp & _— — ee a i a == ar Anime Beat, _—— Too} so0oh EE) saerer 3 f}—1 1H vp =-2v 8 os _l | TIT Tt TT} soon_. | TIT | Yee “on =03 -05. 1 =3 5 “ot ~08 05-1 ~s -5 -10 COLLECTOR CURRENT Ig (A) COLLECTOR CURRENT Ig (A) SAFE OPERATING AREA 10 —— Etc max. Putsep) « $4 -1 ep Ey] reer} =< COMMON S _3[ tc Max. NN | . ee ewirrer © commun NN msi ge _ {iy _to/tesno : BINNS roms
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an © _oq{--LLib rrr TT NAN NTE | E Se aan NC ES Coot 3 SINGLE NONREPETITIVE BE | Sea § [) 7 rusenese | NAN | 3S aK Fo = $ -01F) CURVES MUST BE DERATED --SQ— a —— ee =| uineariy wir icrese = FEE a a a ~0.05{") IN TEMPERATURE. | -osL——_1 1 ~o03L Voro MAX} on “03-05 =i ae 803 =r 3 10-80 —100 COLLECTOR CURRENT Ic (A) COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-05-06 3/3