2SB1478 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1478
DESCRIPTION
- With TO-247 package
- Complement to type 2SD2237
- High DC current gain
- DARLINGTON
APPLICATIONS
- For use in power linear and switching
Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -8 A PC Collector power dissipation T C=25 60 W Tj Junction temperature 150 Tstg Storage temperature -55~150 PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1478 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-10mA; IB=0 -100 V V(BR)CBO Collector-base breakdown voltage I C=-0.1mA; IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage I E=-2mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-5A;IB=-20m A -2.0 V VBEsat Base-emitter saturation voltage I C=-5A;IB=-20m A -2.5 V ICBO Collector cut-off current V CB=-100V; IE=0 -10 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -2 mA hFE DC current gain I C=-2A ; VCE=-3V 2000 20000
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1478 PACKAGE OUTLINE Fig.2 Outline dimensions