2SB1478 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1478
DESCRIPTION
- High DC Current Gain- : hFE = 2000(Min)@ IC= -2A
- Low Collector Saturation Voltage- : V CE(sat) = -2.0V(Max.) @IC= 5A
- Complement to Type 2SD2237
APPLICATIONS
- Designed for power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A PC Collector Power Dissipation @TC=25℃ 60 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1478
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA, IB= 0 -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE=0 -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -2mA; IC=0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A, IB= -20mA B -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A, IB= -20mA B -2.5 V ICBO Collector Cutoff current VCB= -100V, IE= 0 -10 μA IEBO Emitter Cutoff current VEB= -5V, IC= 0 -2 mA hFE DC Current Gain IC= -2A; VCE= -3V 2000 20000 isc Website：www.iscsemi.cn