2SB1477 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

'j£ti£iJ ^zmi-Conductoi Lpioduati, One. C/ U 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB1477

DESCRIPTION

  • Collector-Emitter Breakdown Voltage- : V(BR)CEo=-100V(Min.)
  • Wide Area of Safe Operation
  • Complement to Type 2SD2236

APPLICATIONS

  • Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -100 -100 150 -55-150 UNIT V V V A W r
  • -^ ^ : 3 j PIN 1.BASE j , 2. COLLECT OR ft 1 I 3. BETTER

123 TO-247 package

  • t ' ' • ' i i ^ K i ; '• ; ' h I !l - M • !!v ' ' J J :J * V iJ » mm DIM MINI MAX A 19.80 20.20 B 15.40 15.80 C 4.90 5.10 D 0.90 1.10 E 1.40 1.60 F 1.90 2.10 G 10.80 11.00 H 2.40 2.60 J 0.50 0.70 K 19.50 20.50 P 3.90 4.10 Q 3.30 3.50 U 5.20 5.40 V 2 JO 3.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon PNP Power Transistor 2SB1477

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VBE(sat) IGBO IEBO hFE PARAMETER Collector-Emitter Beakdown Voltage Collector-Base Beakdown Voltage Emitter-Base Beakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS lc=-10mA; IB= 0 lc= -50 u A; IE=0 IE=-50 u A; lc=0 |c= -3A; |B= -0.3A lc= -3A; IB= -0.3A VcB=-100V;lE=0 VEB= -5V; lc= 0 lc=-1A;VCE=-5V MIN 100 100 TYP. MAX -1.5 -2.0 -10 -10 320 UNIT V V V V V uA uA Classifications D 60-120 E 100-200 F 160-320