2SB1477 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1477
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= -100V(Min.)
- Wide Area of Safe Operation
- Complement to Type 2SD2236
APPLICATIONS
- Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1477
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Beakdown Voltage IC= -10mA; IB= 0 100 V V(BR)CBO Collector-Base Beakdown Voltage IC= -50μA; IE=0 100 V V(BR)EBO Emitter-Base Beakdown Voltage IE=-50μA; IC=0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -2.0 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE DC Current Gain IC= -1A; VCE= -5V 60 320 hFE Classifications D E F 60-120 100-200 160-320 isc Website：www.iscsemi.cn 2