2SB1477 SAVANTIC

Document overview

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  • PDF pages: 3

Technical content

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1477

DESCRIPTION

  • With TO-247 package
  • Complement to type 2SD2236
  • Wide area of safe operation

APPLICATIONS

  • For drvier and general purpose applications PINNING Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A PC Collector power dissipation T C=25 60 W Tj Junction temperature 150 Tstg Storage temperature -55~150 PIN DESCRIPTION

1 Base

2 Collector;connected to

3 Emitter

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1477 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-10mA; IB=0 -100 V V(BR)CBO Collector-base breakdown voltage I C=-0.1mA; IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage I E=-0.1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-3A;IB=-0.3 A -1.5 V VBEsat Base-emitter saturation voltage I C=-3A;IB=-0.3 A -2.0 V ICBO Collector cut-off current V CB=-100V; IE=0 -10 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -10 µA hFE DC current gain I C=-1A ; VCE=-5V 60 320 hFE classifications D E F 60-120 100-200 160-320

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1477 PACKAGE OUTLINE Fig.2 Outline dimensions