2SB1470 SAVANTIC
Document overview
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1470
DESCRIPTION
- With TO-3PL package
- Complement to type 2SD2222
- High DC current gain
- Low collector saturation voltage
- DARLINGTON
APPLICATIONS
- For power amplification PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -8 A ICM Collector current-peak -15 A TC=25 120 PC Collector power dissipation Ta=25 3.5 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PL) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1470 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-30mA ;IB=0 -160 V VCEsat Collector-emitter saturation voltage I C=-7A ;IB=-7mA -3.0 V VBEsat Base-emitter saturation voltage I C=-7A ;IB=-7mA -3.0 V ICBO Collector cut-off current V CB=-160V; IE=0 -100 µA ICEO Collector cut-off current V CE=-160V; IB=0 -100 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -100 µA hFE-1 DC current gain I C=-1A ; VCE=-5V 1000 hFE-2 DC current gain I C=-7A ; VCE=-5V 3500 20000 fT Transition frequency I C=-0.5A ; VCE=-10V;f=1MHz 20 MHz Switching times ton Turn-on time 1.0 µs ts Storage time 1.5 µs tf Fall time IC=-7A ;IB1=-IB2=-7mA VCC=-50V 1.2 µs hFE-2 classifications Q S 3500-10000 7000-20000
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1470 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)