2SB1470 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1470
DESCRIPTION
- With TO-3PL package
- Complement to type 2SD2222
- High DC current gain Fig.1 simplified outline (TO-3PL) and symbol
- Low collector saturation voltage
- DARLINGTON
APPLICATIONS
- For power amplification PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -8 A ICM Collector current-peak -15 A TC=25℃ 120 PC Collector power dissipation Ta=25℃ 3.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1470 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 -160 V VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA B -3.0 V VBEsat Base-emitter saturation voltage IC=-7A ;IB=-7mA B -3.0 V ICBO Collector cut-off current VCB=-160V; IE=0 -100 μA ICEO Collector cut-off current VCE=-160V; IB=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 1000 hFE-2 DC current gain IC=-7A ; VCE=-5V 3500 20000 fT Transition frequency IC=-0.5A ; VCE=-10V;f=1MHz 20 MHz Switching times ton Turn-on time 1.0 μs ts Storage time 1.5 μs tf Fall time IC=-7A ;IB1=-IB2=-7mA VCC=-50V 1.2 μs hFE-2 classifications Q S 3500-10000 7000-20000
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1470 PACKAGE OUTLINE F i g . 2 O u t l i n e d i m e n s i o n s ( u n i n d i c a t e d t o l e r a n c e :±0.50 mm)