2SB1470 PANASONIC
Document overview
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Technical content
1Publication date: March 2003 SJD00076BED 2SB1470 Silicon PNP triple diffusion planar type darlington For power amplification Complementary to 2SD2222 ■ Features
- Optimum for 120 W HiFi output
- High forward current transfer ratio hFE
- Low collector-emitter saturation voltage VCE(sat) ■ Absolute Maximum Ratings TC = 25°C ■ Electrical Characteristics TC = 25°C ± 3°C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO −160 V Collector-emitter voltage (Base open) V CEO −160 V Emitter-base voltage (Collector open) V EBO −5V Collector current I C −8A Peak collector current I CP −15 A Collector power dissipation P C 150 W Ta = 25°C 3.5 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Internal Connection B C E Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V CEO IC = −30 mA, IB = 0 −160 V Collector-base cutoff current (Emitter open) ICBO VCB = −160 V, IE = 0 −100 µA Collector-emitter cutoff current (Base open) ICEO VCE = −160 V, IB = 0 −100 µA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 −100 µA Forward current transfer ratio h FE1 VCE = −5 V, IC = −1 A 1 000 hFE2 * VCE = −5 V, IC = −7 A 3 500 20 000 Collector-emitter saturation voltage V CE(sat) IC = −7 A, IB = −7 mA −3V Base-emitter saturation voltage V BE(sat) IC = −7 A, IB = −7 mA −3V Transition frequency f T VCE = −10 V, IC = − 0.5 A, f = 1 MHz 20 MHz Turn-on time t on IC = −7 A, IB1 = −7 mA, IB2 = 7 mA 1.0 µs Storage time t stg VCC = −50 V 1.5 µs Fall time t f 1.2 µs Rank Q S P hFE2 3 500 to 10 000 5 000 to 15 000 7 000 to 20 000 20.0±0.5 2.0±0.3 3.0±0.3 1.0±0.2 5.45±0.3 10.9±0.5 123 26.0±0.5 (10.0)(2.5) Solder Dip (6.0) 20.0±0.5 5.0±0.3 φ 3.3±0.2 (1.5) 2.7±0.3 0.6±0.2 (3.0) (3.0) (2.0) Unit: mm 1: Base 2: Collector 3: Emitter
2 SJD00076BED
VBE(sat) IC hFE IC Cob VCB PC Ta IC VCE VCE(sat) IC ton , tstg , tf IC Safe operation area 0 160 40 120 80 120 160 200 (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)Without heat sink (PC=3.5W) (1) (3) (2) Collector power dissipation PC (W) Ambient temperature Ta (°C) 0 −16−4 −12−8 TC=25˚C –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA IB=–1.0mA Collector current IC (A) Collector-emitter voltage VCE (V) − 0.01 − 0.1 −10 −100 − 0.1 −1 −10 −100 IC/IB=1000 TC=25˚C 25˚C 125˚C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (A) − 0.01 − 0.1 − 0.1 −10 −100 −1 −10 −100 IC/IB=1000 TC=–25˚C 25˚C 125˚C Base-emitter saturation voltage VBE(sat) (V) Collector current IC (A) − 0.1 −1 −10 102 103 104 105 Forward current transfer ratio hFE Collector current IC (A) VCE=–5V TC=125˚C 25˚C –25˚C − 0.1 −1 −10 −100 102 103 104 IE=0 f=1MHz T C=25˚C Collector output capacitance (Common base, input open circuited) Cob (pF) Collector-base voltage VCB (V) 0.01 0.1 100 Turn-on time ton , Storage time tstg , Fall time tf (µs) Collector current IC (A) tstg tf ton Pulsed tw=1ms Duty cycle=1% I C/IB=1000 (–IB1=IB2) VCC=–50V TC=25˚C − 0.01 − 0.1 −10 −100 −10 −100 −1 000 Collector current IC (A) Collector-emitter voltage VCE (V) ICP IC t=10ms t=1ms Non repetitive pulse TC=25˚C DC
Rth t 10−1 102 104 103 10−4 10410310210110−110−210−3 Time t (s) Thermal resistance Rth (°C/W) Note: Rth was measured at Ta=25˚C and under naturalconvection. (1)PT=10V×0.3A(3W) and without heat sink (2)PT=10V×1.0A(10W) and with a 100×100×2mm Al heat sink (1) (2)
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