2SB1468 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB1468
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min)
- Low Collector Saturation Voltage- : VCE(SSI) -0.5V(Max)@ (lc= -5A, IB= -0.25A)
- Complement to Type 2SD2219
APPLICATIONS
- Designed for high-speed inverters.converters. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VcEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Collector Power Dissipation @Ta=25'C Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature VALUE -60 -30 -12 -20 150 -55-150 UNIT V V V A A W ril: 1 But
2 Collector
3 Eaittcr
TO-Z20F p*ck*c* tl—f JJ,J.f. -rrrrrr MM. U.S. -nil- i*11 II I.KUI , I i;!j ' " 0 . - tt1- DIM A B C D F H J K L N g R s v mm UIU lYiin 14.95 10,00 4.40 0.75 3.10 3.70 . 0.50 13.4 1.10 5.00 2.70 2.20 2.65 6.40 MAX 15.05 10.10 4.60 0.90 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 Z85 6.60 V! Semi-C'oijiUictors reserves the right to change test conditions, parameter limits and package dimensions uithout iniliee. Inrbnnalion furnished h> N.I Semi-Oimluetors is believed to he both accurate and reli:ible ;u the time ol'iioini; ui pi-ess. I louever. N.I Scini-C'onductiirs assumes no responsibility tor an> errors or omissions discovered in ils use. N.I Semi-( 'oiidutlors oiicoui'iiges customers In verily that datasheets are current before plaeinj: orders. Qualiry Semi-Conductors
Silicon PNP Power Transistor 2SB1468
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)£BO VcE(sat) Ir.BO IEBO huM HIFE2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage-- Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= -1 mA; RBE= *» lc=-1mA, IE=0 l£=-1mA; lc=0 lo= -5A; |B= -0 25A VCB= -40V; IE= 0 VEB= -4V; lc= 0 lc=-1A;VCE=-2V lc= -6A; VCE= -2V WIN -30 -60 TYP. MAX -0,5 -100 -100 280 UNIT V V V V MA MA Switching Times ton Utg tf Turrj-on Time Storage Time Fall Time Vcc- -10V RL= 20 , IC=-5A;IB1=-IB2=-0.5A, 0.1 0.3 0.03 M S (J S M s
- hFE 1 Classifications Q 70-140 R 100-200 S 140-280