2SB1468 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 isc SiliconPNPPowerTransistor 2SB1468
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=-30V(Min)
- LowCollectorSaturationVoltage- :VCE(sat)= -0.5V(Max)@(IC=-5A,IB=-0.25A)
- ComplementtoType 2SD2219
- ComplementtoType 2SD2065
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Designedforhigh-speedinverters,converters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -60 V VCEO Collector-EmitterVoltage -30 V VEBO Emitter-BaseVoltage -6 V IC CollectorCurrent-Continuous -12 A ICM CollectorCurrent-Pulse -20 A PC CollectorPowerDissipation @Ta=25℃ 2 W CollectorPowerDissipation @TC=25℃ 25 TJ JunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 isc SiliconPNPPowerTransistor 2SB1468 ELECTRICALCHARACTERISTICS Tj=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-1mA;RBE= ∞ -30 V V(BR)CBO Collector-BaseBreakdown Voltage IC=-1mA;IE=0 -60 V V(BR)EBO Emitter-BaseBreakdownVoltage IE=-1mA;IC=0 -6 V VCE(sat) Collector-EmitterSaturationVoltage IC=-5A;IB=-0.25A -0.5 V ICBO CollectorCutoffCurrent VCB=-40V;IE=0 -100 μA IEBO EmitterCutoffCurrent VEB=-4V;IC=0 -100 μA hFE-1 DCCurrentGain IC=-1A;VCE=-2V 70 280 hFE-2 DCCurrentGain IC=-6A;VCE=-2V 30 SwitchingTimes ton Turn-onTime VCC= -10V,RL=2Ω, IC=-5A;IB1=-IB2=-0.5A, 0.1 μs tstg StorageTime 0.3 μs tf FallTime 0.03 μs hFE-1 Classifications Q R S 70-140 100-200 140-280