2SB1468 SANYO

Document overview

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Technical content

Features

+ Micaless package facilitating mounting + Low collector-to-emitter saturation voltage : Vor(sat)= — 0.5V(PNP), 0.4V(NPN) max. - Large current capacity (|): 2SB1468 Absolute Maximum Ratings at Ta= 25°C unit Collector-to-Base Voltage Vcso (-)60 Vv Collector-to-Emitter Voltage Voro (-)30 v Emitterto-Base Voltage VEBO (-)6 v Collector Current Io (-)12 A Collector Current (Pulse) lop (-)20 A Collector Dissipation Po 2 WwW Te= 25°C 25 WwW Junction Temperature Tj 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Icno Vog=(—)40V Ig =0 (-)0.1 mA Emitter Cutoff Current IgBo Vep=(—-)4V,Io=0 (-)0.1 mA DC Current Gain hpg(1)X) Vog=(-)2V,Io=(-)1IA 10K 280% hpg(2) Vog=(-)2V,Ic=(-)6A 30 Gain-Bandwidth Product fy Vor=(-)5V,Ig=(—)1A 120 MHz C-E Saturation Voltage Voxtsat) I¢=(—)5A,Ig=(—)0.25A (-0.5) v 0.4 v C-B Breakdown Voltage Visrocso Ic=(—)1mA,Ig=0 (—)60 v C-E Breakdown Voltage Vesryceo Ic=(—)1mA,Rgg= © (-)30 Vv E-B Breakdown Voltage Vesryeso Ip=(—)1mA,Ig=0 . (-)6 v Turn-ON time ton See specified Test Circuit. (0.1)0.2 us Storage Time tetg Same as above. (0.3)0.5 BS Fall Time te Same as above. 0.03 ES % : The 2SB1468/2SD2219 are classified by 1A hyg as follows: 140 $ 280 Package Dimensions 2041 Switching Time Test Circuit (units san) ey 16.0. 14.0 2h PW=20us —_ ouTPUT Fr B Do= 1% INPUT Re 6 P SE a 18. * 50 > + 7.24 E: Emitter 10x | 470u n te C: Collecter Vee=—5V Voo=10V ‘ ; 0.7 B: Base Wisi =—10le2=te= 5A, SANYO: T0220ML Unit (Resistance : 2, Capacitance : F) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-JAPAN 9140MH,JK(KOTO) No.3364-1/3

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37° WY 2 Y as HH ANH Po ee 23 [NW 2 ji pte NPE o 3 Poy 8 2 Jy PN “on _eaeee on tt g[imsio100ms:Singlepulse | | | | | Imsto100ms:Single pulse | | | | | ee rr a re Collector-toEmitter Voltage,Von — V Collector-to-Emitter Voltage,Vog ~ V » a Po — Ta 25 Pc - Ta a + ; ae .) a | ci i | | z° Ne & Py Q a° “| ) 4 | Ke an PPriN) tN %% 2 0 60 Cy 100 120 mw 160 0 20 40 60 80 100 720 _ 160 Ambient Temperature,Ta — °C Ambient Température,Ta — °C MNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and iitigation and all-damages, cost and expenses associated with such use: @ ,Not impose any responsibility for ariy fault or negligence which may be cited in any such claim or ligation on SANYO ELECTRIC CO, LTO, its affliates, subsidiaries and distributors or any of y their officers and employees jointly or severally “| MiInformation (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of Property ig third parties. OO No.3364-3/3