2SB1462 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216 n Features l High foward current transfer ratio hFE . l SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–75 3:Collector SS-Mini Type Package 1.6–0.15 1.6–0.1 1.0–0.10.75–0.15 0.45–0.1 0.50.3 0 to 0.1 0.5 0.8–0.1 0.40.4 0.2–0.1 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –60 –50 –200 –100 125 125 –55 ~ +125 Unit V V V mA mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol I CBO ICEO V CBO V CEO V EBO hFE * V CE(sat) fT C ob Conditions V CB = –20V, IE = 0 V CE = –10V , IB = 0 IC = –10mA, IE = 0 IC = –100mA, IB = 0 IE = –10mA, IC = 0 V CE = –10V , IC = –2mA IC = –100mA, IB = –10mA V CB = –10V , IE = 1mA, f = 200MHz V CB = –10V , IE = 0, f = 1MHz min –60 –50 160 typ – 0.11 2.7 max – 0.1 –100 460 – 0.3 Unit mA mA V V V V MHz pF *hFE Rank classification Rank Q R S hFE 160 ~ 260 210 ~ 340 290 ~ 460 Marking Symbol AQ AR AS Marking symbol :A

0 160 40 120 80 14020 100 60 150 125 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 0 –18 –6 –12 –60 –50 –40 –30 –20 –10 Ta=25˚C IB=–300mA –250mA –200mA –150mA –100mA –50mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 0 –450 –150 –300 –60 –50 –40 –30 –20 –10 VCE =–5V Ta=25˚C Base current IB (mA) Collector current IC (mA ) 0 –1.8 – 0.6 –1.2 –400 –300 –100 –250 –350 –200 –50 –150 VCE =–5V Ta=25˚C Base to emitter voltage VBE (V) Base current IB (mA) –240 –200 –160 –120 –80 –40 VCE =–5V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 IC /IB=10 25˚C –25˚C Ta=75˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 600 500 400 300 200 100 VCE =–10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 0.1 1 10 1000.3 3 30 160 120 100 140 VCB =–10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC — Ta I C — V CE IC — IB IB — V BE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB

0.01 0.1 1 100.03 0.3 3 VCB =–5V f=1kHz R g=2kW Ta=25˚C Emitter current IE (mA ) Noise figure NF (dB) 0.1 0.3 1 3 10 VCB =–5V R g=50kW Ta=25˚C f=100Hz 10kHz 1kHz Emitter current IE (mA ) Noise figure NF (dB) 0.1 0.3 1 3 10 300 100 VCE =–5V f=270Hz Ta=25˚C hfe hoe (mS) hie (kW ) hre (5 10–4) Emitter current IE (mA ) h Parameter 300 100 IE=2mA f=270Hz Ta=25˚C hfe hoe (mS) hie (kW ) hre (5 10–4) Collector to emitter voltage VCE (V) h Parameter NF — IE NF — IE h Parameter — IE h Parameter — VCE