2SB1454 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
^£.mL-(-onau.ckoi J ioaucti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB1454
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= -80V(Min)
- Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (lc= -3A, IB= -0.3A)
- Complement to Type 2SD2202
APPLICATIONS
- Designed for high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=251C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj •• Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Collector Power Dissipation @Ta=25-C Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature VALUE -90 -80 150 -55-150 UNIT V V V V A W PIM: 1 Base 2 C oil. c tor
3 E«itt«r
TO-220I ptcktc* '. r'; i T- T i j wi 11 7 . i.I :j i.l i. i! - "P j .v DIM A B C D F H J K L N q R s P mm MIN 14.95 10.00 4.40 0.75 3.10 3.70 0.50 13.4 1.10 5.00 2.70 2.20 2.65 6.40 MAX 15.05 10.10 4.60 0.90 3.30 '3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.85 6.60 N.I Scmi-C'imdiictors reserves the right to change lest amditions, parameter limits ;IIK! pitekjijw dimensions \\\\ithout nmkv. Inritnnation I'uniislioJ h> N.I Senii-Coniluttors is helicvctl to be hoth accurate ami reliable nt llw lime ol'jioin N.I Scnii-Ct-nddclors cncotira.w. cnslomei'S to vciil's ihal Jalaslieel-, aiv cuneal he lore plavinj; oalcrs. Qualilv 5emi-Conducfors
Silicon PNP Power Transistor 2SB1454
ELECTRICAL CHARACTERISTICS
Tj«25'C unless otherwise specified SYMBOL V<BR)CEO V(BR)CBO V(BR)EBO VcE(sat) ICBO IEBO hpF-1 hpF-? . fl PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS lc= -1mA; RBE= °° lc=-1mA; IE=0 le=-1mA, 1(5*0 lc= -3A; IB= -0.3A VC6= -80V; le= 0 VE8= -4V; lc= 0 lc= -1A; Vce= -2V lc= -3A; VCE= -2V lc= -1A; VCE= -5V MIN -80 -90 TYP. MAX -0.5 -100 -100 280 UNIT V V V V M A u A MHz Switching Times ton Utg tf Turn-on Time Storage Time Fall Time Vcc= -50V, RL= 250 , lc= -2A;lBi= -!BZ= -0.2A, 0.2 0.7 0.2 u s u s M s EM Classifications Q 70-140 R 100-200 S 140-280