2SB1454 SAVANTIC
Document overview
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- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1454
DESCRIPTION
- With TO-220F package
- Complement to type 2SD2202
- Low collector saturation voltage:
- Large current capacity
APPLICATIONS
- High current switching applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -90 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -5 A ICM Collector current-peak -9 A Ta=25 2.0 PC Collector dissipation TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220F) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1454 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-1mA ;RBE=< -80 V V(BR)CBO Collector-base breakdown voltage I C=-1mA ;IE=0 -90 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage I C=-3A ;IB=-0.3A -0.5 V ICBO Collector cut-off current V CB=-80V; IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-4V; IC=0 -0.1 mA hFE-1 DC current gain I C=-1A ; VCE=-2V 70 280 hFE-2 DC current gain I C=-3A ; VCE=-2V 30 fT Transition frequency I C=-1A ; VCE=-5V 20 MHz Switching times ton Turn-on time 0.2 µs ts Storage time 0.7 µs tf Fall time IC=-2.0A ;IB1=-IB2=-0.2A VCC=-50V ,RL=25D 0.2 µs hFE-1 Classifications Q R S 70-140 100-200 140-280
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1454 PACKAGE OUTLINE Fig.2 Outline dimensions