2SB1446 PANASONIC

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Technical content

Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2179 n Features l Low collector to emitter saturation voltage VCE(sat). l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT2 Type Package 2.5–0.1 4.5–0.114.5–0.5 2.5–0.5 2.5–0.5 2.5–0.1 6.9–0.1 1.05 –0.05 (1.45) 4.00.7 0.8 0.15 0.5 0.21.01.0 0.65 max. 0.45 +0.1 –0.05 0.45 +0.1 –0.05 321 Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings –50 –50 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = –20V, IE = 0 IC = –10mA, IE = 0 IC = –1mA, IB = 0 IE = –10mA, IC = 0 V CE = –2V , IC = –500mA*2 V CE = –2V , IC = –2.5A*2 IC = –2A, IB = –100mA*2 IC = –2A, IB = –100mA*2 V CB = –10V , IE = 50mA, f = 200MHz V CB = –10V , IE = 0, f = 1MHz min –50 –50 120 typ – 0.2 – 0.85 max – 0.1 340 – 0.3 –1.2 120 Unit mA V V V V V MHz pF * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion *1hFE1 Rank classification Rank R S hFE1 120 ~ 240 170 ~ 340 *2 Pulse measurement 1.2–0.1 0.65max. 0.45 0.1 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type)

0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –2.4 –2.0 –1.6 –1.2 – 0.8 – 0.4 Ta=25˚C IB=–8mA –1mA –2mA –3mA –4mA –5mA –6mA –7mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 IC /IB=20 Ta=100˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=20 Ta=–25˚C 100˚C 25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 500 400 300 200 100 450 350 250 150 VCE =–2V Ta=100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1 3 10 30 100 200 160 120 180 140 100 VCB =–10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 240 200 160 120 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB