2SB1421 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
c$£mi-Condiictoi iJ^ioducti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1421
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= -140V(Min)
- Wide Area of Safe Operation
- Complement to Type 2SD2140
APPLICATIONS
- Designed for high power amplifications.
- Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICP PC Tj - Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Collector Power Dissipation @ Tc=25t: Collector Power Dissipation @ Ta=25'C Junction Temperature Storage Temperature Range VALUE -140 -140 -12 2.5 150 -55-150 UNIT V V V A A W TIH:I Base
2 Collector
3 Emitter
-«- C DIM A B C D E F G H J K L N Q R u Y mm WIN 19.60 15.50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 20.00 1.90 10.89 4.90 3.35 1.995 5.90 MAX 20.10 15.70 4.90 1.10 2,10 3.60 3.20 3.40 0.605 20,70 2.20 10.91 5.10 3.45 2.100 6,10 9.90 1 10.10 N.I Semi-Conductors reserves the right to change tost conditions, parameter limits ;irul package dimensions \\vithout notice. Information rimii.shed by N.I Semi-Conductors is believed to he hoth iiccnnite mid relkihle at the time ofgoiii lo press. I luuever, N.I Senii-Coiklnelors assumes no responsihilily lor anv errors or omissions discovered in its use. N.I Scmi-( 'ondticlors cncnuni^es ciistonn-rs lo \\erily thai datashecK are cmivnt hcl'oiv placinj; orders. Qualify -Semi-Conductors
Silicon PNP Power Transistor 2SB1421
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL VcE(sat) Vee(on) ICBO IEBO hpE-1 hFE-2 hpE-3 fr PARAMETER Collector-Emitter Saturation Voltage Base -Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS lc= -5A; IB= -0.5A lc= -5A; VCE= -5V VCB= -140V; IE= 0 VEB= -3V; lc= 0 lc= -20rnA; VCE= -5V lc= -1A; VCE= -5V lc= -5A; VCE= -5V lc= -0.5A; VCE= -5 V; f= 1MHz MIN TYP. MAX -2.0 -1.8 -50 -50 200 UNIT V V UA MA MHz hFE.2Classifications Q 60-120 S 80-160 P 100-200