2SB1420 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPDarlingtonPowerTransistor 2SB1420
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=-120V(Min)
- HighDCCurrentGain- :hFE=2000(Min)@IC=-8A
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
APPLICATIONS
- Driverforchopperregulator,DCmotordriverandgeneral purposeapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -120 V VCEO Collector-EmitterVoltage -120 V VEBO Emitter-BaseVoltage -6 V IC CollectorCurrent-Continuous -16 A ICP CollectorCurrent-Pulse -26 A IB BaseCurrent-Continuous -1 A PC CollectorPowerDissipation @TC=25℃ 80 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPDarlingtonPowerTransistor 2SB1420 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-10mA;IB=0 -120 V VCE(sat) Collector-EmitterSaturationVoltage IC=-8A;IB=-16mA -1.5 V VBE(sat) Base-EmitterSaturationVoltage IC=-8A;IB=-16mA -2.5 V ICBO CollectorCutoffCurrent VCB=-120V;IE=0 -10 μA IEBO EmitterCutoffCurrent VEB=-6V;IC=0 -10 mA hFE DCCurrentGain IC=-8A;VCE=-4V 2000 COB OutputCapacitance IE=0;VCB=-10V;ftest=1.0MHz 350 pF fT Current-Gain—BandwidthProduct IE=1A;VCE=-12V 50 MHz SwitchingTimes ton Turn-onTime IC=-12A;IB1=-IB2=-24mA, VCC= -24V,RL=2Ω 1.0 μs tstg StorageTime 3.0 μs tf FallTime 1.0 μs