2SB1417 PANASONIC

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2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A n Features l High forward current transfer ratio hFE which has satisfactory linearity l Low collector to emitter saturation voltage VCE(sat) l Allowing automatic insertion with radial taping n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 2.0 150 –55 to +150 Unit V V V A A W 2SB1417 2SB1417A 2SB1417 2SB1417A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CES ICEO IEBO V CEO hFE1 * hFE2 V BE V CE(sat) fT ton tstg tf Conditions V CE = –60V , VBE = 0 V CE = –80V , VBE = 0 V CE = –30V , IB = 0 V CE = –60V , IB = 0 V EB = –6V , IC = 0 IC = –30mA, IB = 0 V CE = –4V , IC = –1A V CE = –4V , IC = –3A V CE = –4V , IC = –3A IC = –3A, IB = – 0.375A V CE = –5V , IC = – 0.2A, f = 10MHz IC = –1A, IB1 = – 0.1A, IB2 = 0.1A, V CC = –50V min –60 –80 typ 0.3 1.0 0.2 max –100 –100 –100 –100 –100 250 –1.8 –1.2 Unit mA mA mA V V V MHz ms ms ms 2SB1417 2SB1417A 2SB1417 2SB1417A 2SB1417 2SB1417A Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. *hFE1 Rank classification Rank Q P hFE1 70 to 150 120 to 250 Unit: mm 1:Base 2:Collector 3:Emitter MT4 Type Package 1.010.0–0.2 0.55–0.1 2.5–0.2 2.5 –0.2 4.2–0.2 13.0–0.2 2.5–0.2 18.0–0.5 Solder Dip 5.0–0.1 2.25–0.2 1.2–0.1 0.65–0.1 0.55–0.1 C1.0 90° C1.0 123 1.05–0.10.35–0.1

Power Transistors 2SB1417, 2SB1417A PC —T a I C —V CE V CE(sat)—I C IC —V BE hFE —I C fT —I C C ob —V CB ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) Without heat sink (PC =2.0W) (1) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) TC =25˚C –10mA –20mA –30mA –40mA –50mA –60mA –70mA –80mA –90mAIB=–100mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=8 25˚C 100˚C TC =–25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) VCE =–4V TC =100˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (A) 100 300 1000 3000 10000 30000 100000 VCE =–4V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 100 300 1000 3000 10000 VCE =–5V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 1000 100 300 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0– 4 –1 –3 –2 0.01 0.03 0.1 0.3 100 tstg ton tf Pulsed tw =1ms Duty cycle=1% I C /IB=5 (IB1=–IB2) VCC =–200V TC =25˚C Collector current IC (A) Switching time ton,tstg,tf (ms) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 t=1ms ICP IC 10ms 2SB1417A 2SB1417 Non repetitive pulse TC =25˚C DC Collector to emitter voltage VCE (V) Collector current IC (A)

Power Transistors 2SB1417, 2SB1417A R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 0.1 100 10000 1000 (1) (2) Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W)