Download PDF2SB1416 PANASONIC
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Publication date: March 2003 SJD00071BED 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 ■ Features
- High forward current transfer ratio h FE which has satisfactory linearity
- Low collector-emitter saturation voltage VCE(sat)
- Allowing automatic insertion with radial taping ■ Absolute Maximum Ratings Ta = 25°C ■ Electrical Characteristics Ta = 25°C ± 3°C Unit: mm 1: Emitter 2: Collector 3: Base 7.5±0.2 0.65±0.1 0.7±0.1 1.15±0.2 2.5±0.2 2.5±0.2 0.85±0.1 1.0±0.1 0.7±0.1 1.15±0.2 0.5±0.1
10.8 C 23
0.4±0.1 4.5±0.2 0.8 C 0.8 C 3.8±0.2 16.0±1.0 10.8±0.2 2.05±0.2 90˚ 2.5±0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO −60 V Collector-emitter voltage (Base open) V CEO −60 V Emitter-base voltage (Collector open) V EBO −5V Collector current I C −3A Peak collector current I CP −5A Collector power dissipation P C 1.5 W Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank P Q R hFE1 40 to 90 70 to 150 120 to 250 Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V CEO IC = −30 mA, IB = 0 −60 V Base-emitter voltage V BE VCE = −4 V, IC = −3 A −1.8 V Collector-emitter cutoff current (E-B short) ICES VCE = −60 V, VBE = 0 −200 µA Collector-emitter cutoff current (Base open) ICEO VCE = −30 V, IB = 0 −300 µA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 −1m A Forward current transfer ratio h FE1 * VCE = −4 V, IC = −1 A 40 250 hFE2 VCE = −4 V, IC = −3 A 10 Collector-emitter saturation voltage V CE(sat) IC = −3 A, IB = − 0.375A −1.2 V Transition frequency f T VCB = −5 V, IE = 0.1 A, f = 200 MHz 270 MHz Turn-on time t on IC = −1 A, IB1 = − 0.1 A, IB2 = 0.1 A 0.5 µs Storage time t stg 1.2 µs Fall time t f 0.3 µs
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PC Ta IC VCE IC VBE VCE(sat) IC hFE IC fT IE Safe operation area R th t 0 160 40 120 80 0.4 0.8 1.2 1.6 2.0 Collector power dissipation PC (W) Ambient temperature Ta (°C) Without heat sink −1.2 −1.0 − 0.8 − 0.6 − 0.4 − 0.2 Ta=25˚C –1mA –2mA –3mA –4mA –5mA –6mA –7mA IB=–8mA Collector current IC (A) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) Collector current IC (A) −1.2 −1.0 − 0.8 − 0.6 − 0.4 − 0.2 VCE=–4V Ta=75˚C –25˚C 25˚C − 0.001 − 0.01 − 0.1 −10 −10 −100 −1 000 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (A) IC/IB=8 Ta=75˚C Ta=–25˚C Ta=25˚C Forward current transfer ratio hFE Collector current IC (A) 240 200 160 120 −1 −10 −100 −1 000 VCE=–4V Ta=75˚C 25˚C –25˚C 300 250 200 150 100 Collector current IC (A) Transition frequency fT (MHz) VCB=–5V f=200MHz T C=25˚C − 0.01 − 0.1 − 0.1 −10 −100 −1 −10 −100 Collector current IC (A) Collector-emitter voltage VCE (V) Single pulse TC=25˚C t=10ms t=1ms ICP IC DC 10−1 102 104 103 10−4 10410310210110−110−210−3 Time t (s) Thermal resistance Rth (°C/W) Without heat sink
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