2SB1411 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1411

DESCRIPTION

  • Collector-Emitter Breakdown Voltage- :V(BR)CEO=-100V(Min)
  • High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, lc= -1A)
  • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -1A, IB= -2mA)

APPLICATIONS

  • High power switching applications.
  • Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO Ic I CM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25'C Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature VALUE -100 -100 -0.5 150 -55-150 UNIT V V V A A A W B Ml B
  • - 0 - N - H K DtM A B C D F H J K L N Q R s u 1T^ tin: I TO-220 - C - -s- R J • - mi MtN 14.95 10.00 4.40 0.75 3.10 3.70 0.50 13.4 1.10 5.00 2.70 2.20 2.65 6.40 v — • — iw— Base Colle Eiiitt F pack U tl MAX 15.05 10.10 4.60 0,90 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.85 6.60 '•2 J ctor er age A N.I Semi-conductors reserves the right to change test conditions, parameter limits and package dimensions \\vithout notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of goinu to press. llo\\\\e\\er, N.I Semi-Conduelors iissumes no responsibility for an> errors or omissions discovered in its u.-,e. *" N I Semi-Oinductors cncimra.ues (.-nsloiners to \\erify that datasheets are oimviil before placing oiilers. Qualify 5emi-Conductors

Silicon PNP Darlington Power Transistor 2SB1411

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified SYMBOL V(BR)CEO VcE(sat)-1 VcE(sat)-2 VBE(sat) ICBO IEBO hpE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= -30mA; IB= 0 lc= -1A; IB= -2mA "lc= -2A; IB= -8mA lc= -1A; IB= -2mA VCB=-100V;IE=0 VEB= -6V; lc= 0 lc= -1A; VCE= -3V lc= -2A; VOE= -3V MIN -100 1500 1000 TYP. MAX -1.5 -2.5 -2.2 -100 , -2.5 15000 UNIT V V V V MA mA Switching Times ton tstg tf Turn-on Time Storage Time Fall Time lc=-1A, IB1= -lB2= -2mA, Vcc== -30V; RL= 30Q 1.0 3.0 2.0 u s u s u s