2SB1411 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1411
DESCRIPTION
- With TO-220F package
- DARLINGTON
- High DC current gain
- Low collector saturation voltage
APPLICATIONS
- Switching applications
- Hammer drive ,pulse motor drive applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -2 A ICM Collector current-peak -3 A IB Base current -0.5 A TC=25 20 W PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220F) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1411 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-50mA ;IB=0 -110 V VCEsat Collector-emitter saturation voltage I C=-5A; IB=-5mA -2.5 V VBEsat Base-emitter saturation voltage I C=-5A; IB=-5mA -3.0 V ICBO Collector cut-off current V CB=-110V; IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -0.1 mA hFE DC current gain I C=-5A ; VCE=-4V 5000 fT Transition frequency I C=-0.5A ; VCE=-12V 100 MHz COB Collector output capacitance f=1MHz;V CB=-10V 110 pF Switching times ton Turn-on time 1.1 µs ts Storage time 3.2 µs tf Fall time IC=-5A IB1=-IB2=-5mA VCC=30V ,RL=6B 1.1 µs hFE Classifications O p Y 5000-12000 6500-20000 15000-30000
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1411 PACKAGE OUTLINE Fig.2 Outline dimensions