2SB1411 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1411
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= -100V(Min)
- High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -1A)
- Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -1A, IB= -2mA) B
APPLICATIONS
- High power switching applications.
- Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A IB Base Current-Continuous -0.5 A Collector Power Dissipation @Ta=25℃ 2 PC Collector Power Dissipation @TC=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1411
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1A; IB= -2mA B -1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB= -8mA B -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -2mA B -2.2 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -2.5 mA hFE-1 DC Current Gain IC= -1A; VCE= -3V 1500 15000 hFE-2 DC Current Gain IC= -2A; VCE= -3V 1000 Switching Times ton Turn-on Time 1.0 μs tstg Storage Time 3.0 μs tf Fall Time IC= -1A, IB1= -IB2= -2mA, VCC≈ -30V; R L= 30Ω 2.0 μs isc Website：www.iscsemi.cn 2