2SB1403 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1403
DESCRIPTION
- With TO-220Fa package
- High DC current gain Fig.1 simplified outline (TO-220Fa) and symbol
- Low collector saturation voltage
- DARLINGTON
APPLICATIONS
- For use in low frequency power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector -emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -6 A ICM Collector current-peak -12 A Ta=25℃ 2 PC Collector power dissipation TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1403 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE=∞ -120 V V(BR)CBO Collector-base breakdown voltage IC=-100μA; IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-50mA; IC=0 -7 V VCEsat-1 Collector-emitter saturation voltage IC=-3A ;IB=-6mA B -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-6A ;IB=-60mA B -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-3A ;IB=-6mA B -2.0 V VBEsat-2 Base-emitter saturation voltage IC=-6A ;IB=-60mA B -3.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA ICEO Collector cut-off current VCE=-100V; RBE=∞ -10 μA hFE DC current gain IC=-3A ; VCE=-3V 1000 20000 VD Diode forward voltage ID=6A 3.0 V
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1403 PACKAGE OUTLINE F i g . 2 O u t l i n e d i m e n s i o n s ( u n i n d i c a t e d t o l e r a n c e : ±0.15 mm)