2SB1402 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
<^£.mi-(londu.doi LP , Ona.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1402
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= -120V(Min)
- High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, lc= -1.5
APPLICATIONS
- Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO Ic lew PC Tj - Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @Ta=25°C Collector Power Dissipation @TC=25°C Junction Temperature Storage Temperature VALUE -120 -120 150 -55-150 UNIT V V V A A W f ^ h Base Collector Emitter -, j TO~220Fa package f , '&* ' V >, 1 H t I DIM A B C D F G H J K L N Q R s U V rF .,'_ *" *L rj *^D mm MIN 16.S5 9,54 4.35 0.75 3,20 6.90 5.15 0.45 13.35 1.10 I 4.98 4.35 2.55 2.70 1.75 1.30 MAX 17.15 10.10 4,65 0. 90 3.40 7.20' 5.45 0.75 13.65 1.30 5.18 5.15 3.25 2.90 2.05 1.50 NJ Semi-Contluctors reserves the right to change test conditions, parameter limits anil package dimensions without notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable ill the time ofuoinu to press. I luwewr. N.I Semi-Coiuliiclors assumes no responsibility for an\\s or omissions discovered iu its use. Nl Senii-C'iMiduclors encmiraj;cs customers to \\erify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Darlington Power Transistor 2SB1402
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO Vce(sat)-1 VcE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO ICEO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage .. Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain CONDITIONS lc= -25mA; RBE= °° lc= -0.1mA; IE=0 IE= -5mA; lc= 0 lc=-1.5A;lB=-3mA lc= -3A; IB= -30mA lc=-1.5A;lB=-3mA lc= -3A; IB= -30mA VCB=-100V; IE=0 VCE=-100V;RBE= °° lc=-1.5A;VGE=-3V MIN -120 -120 1000 TYP. MAX -1.5 -3.0 -2.0 -3.5 -10 -10 20000 UNIT V V V V V V V uA uA