2SB1402 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1402
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= -120V(Min)
- High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A)
APPLICATIONS
- Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -6 A Collector Power Dissipation @Ta=25℃ 2 PC Collector Power Dissipation @TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1402
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; RBE= ∞ -120 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50mA; IC= 0 -7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -3mA B -1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB= -30mA B -3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -1.5A; IB= -3mA B -2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -3A; IB= -30mA B -3.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -10 μA ICEO Collector Cutoff Current VCE= -100V; RBE= ∞ -10 μA hFE DC Current Gain IC= -1.5A; VCE= -3V 1000 20000 VECF C-E Diode Forward Voltage IF= 3A 3.0 V isc Website：www.iscsemi.cn 2