2SB1402 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1402
DESCRIPTION
- With TO-220Fa package
- High DC current gain
- Low collector saturation voltage
- DARLINGTON
APPLICATIONS
- For use in low frequency power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector -emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -3 A ICM Collector current-peak -6 A Ta=25 2 PC Collector power dissipation TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220Fa) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1402 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-25mA; RBE== -120 V V(BR)CBO Collector-base breakdown voltage IC=-100µA; IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage I E=-50mA; IC=0 -7 V VCEsat-1 Collector-emitter saturation voltage I C=-1.5A ;IB=-3mA -1.5 V VCEsat-2 Collector-emitter saturation voltage I C=-3A ;IB=-30mA -3.0 V VBEsat-1 Base-emitter saturation voltage I C=-1.5A ;IB=-3mA -2.0 V VBEsat-2 Base-emitter saturation voltage I C=-3A ;IB=-30mA -3.5 V ICBO Collector cut-off current V CB=-100V; IE=0 -10 µA ICEO Collector cut-off current V CE=-100V; RBE== -10 µA hFE DC current gain I C=-1.5A ; VCE=-3V 1000 20000 VD Diode forward voltage I D=3A 3.0 V
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1402 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)