2SB1383 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
^E.mi-dondu.cto'i LPioaucti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1383
DESCRIPTION
- High DC Current Gain : hFE= 2000(Min.)@ lc= -12A, VCE= ^
- High Collector-Emitter Breakdown Voltage- :V(BR)cEO=-120V(Min)
- Complement to Type 2SD2083
APPLICATIONS
- Designed for driver of solenoid, motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25TJ) SYMBOL VCBO VCEO VEBO Ic lew IB PC Tj - ^stg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature Range VALUE -120 -120 -25 -40 120 150 -55-150 UNIT V V V A A A W 1 2 3 ni:l Btse
2 Collector
3 Initt*r
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- p' ''I' ^ U '::,:, :;J . f -»-D DIM A B C D E F G H J K L N q R s u Y mm MIN 19.60 15.50 4.70 0.9 1.9 D 3.40 2.90 3,20 0.595 20.00 1.90 10.89 4.90 3.35 1,995 9.9< MAX 20.10 hli70 4.90 1.10 2.10 3.60 3.20 3.40 0.605 20.70 2.20 10,91 5,10 3.45 2.100 6,1i| 10.10 NJ Sonii-C oinluctors reserves the right to change tost conditions, parameter limits ami package ilimen.sions \\\\ithout Ouali^y 5emi-Con<iuctors
Silicon PNP Darlington Power Transistor 2SB1383
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL V(BR)CEQ VcE(sat) VBE(sat) ICBO IEBO hpE COB fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff current Emitter Cutoff current DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -25mA ,IB= 0 lc=-12A,lB=-24mA lc=-12A,lB=-24mA VcB=-120V, IE=0 VEa= -6V, lc= 0 lc= -12A ; VCE= -4V IE= 0; VCB= -10V; fte5t= 1MHz le=1A;VCE=-12V MIN -120 2000 TYP. 230 MAX -1.8 -2.5 -10 -10 UNIT V V V MA mA PF MHz Switching Times tor, tstg ..tf Turn-On Time Storage Time Fall Time lc = -12A,lBi = -lB2=-24mA: Vcc= 24V, RL= 2Q 1.0 3.0 1.0 M s M S M S