2SB1383 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1383
DESCRIPTION
- High DC Current Gain : h FE= 2000(Min.)@ IC= -12A, VCE= -4V
- High Collector-Emitter Breakdown Voltage- : V (BR)CEO = -120V(Min)
- Complement to Type 2SD2083
APPLICATIONS
- Designed for driver of solenoid, motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -25 A ICM Collector Current-Peak -40 A IB B Base Current- Continuous -2 A PC Collector Power Dissipation @TC=25℃ 120 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1383
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ,IB= 0 B -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -12A ,IB= -24mA -1.8 V VBE(sat) Base-Emitter Saturation Voltage IC= -12A ,IB= -24mA -2.5 V ICBO Collector Cutoff current VCB= -120V, IE= 0 -10 μA IEBO Emitter Cutoff current VEB= -6V, IC= 0 -10 mA hFE DC Current Gain IC= -12A ; VCE= -4V 2000 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 230 pF fT Current-Gain—Bandwidth Product IE= 1A ; VCE= -12V 50 MHz Switching Times ton Turn-On Time 1.0 μs tstg Storage Time 3.0 μs tf Fall Time IC = -12A,IB1 = -IB2= -24mA; VCC= -24V, RL= 2Ω 1.0 μs isc Website：www.iscsemi.cn