2SB1382 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SB1382
DESCRIPTION
- Collector-Emitter Breakdown Voltage- :V(BR)cEo=-120V(Min)
- High DC Current Gain- : hFE= 2000( Min.) @(lc= -8A, VCE= -4V)
- Low Collector Saturation Voltage- : VcE<sair -1.5V(Max)@ (lc= -8A, IB= -16mA)
- Complement to Type 2SD2082
APPLICATIONS
- Designed for chopper regulator, DC motor driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25X:) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj TR|g PARAMETER Collector-Base Voltage Coltector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Colleptor Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature VALUE -120 -120 -16 -26 150 -55-150 UNIT V V V A A A W X.'
2 Collector
3 Et»it t*r
A B C D F G H J K L N R S U V mm MM 19.90 15.75 5.50 0.90 3.30 2.90 5.90 0.595 21.10 1.90 10.80 4.90 3.75 3.20 9.90 4.:o Z 1 190 MAX 20.10 16.10 5.70 1.10 3.50 3.20 6.10 0.70 22.50 2.25 11.00 5.10 3.95 3.60 10.10 4.90 2.10 VI Semi-Cnndiictors reserves the right to change tost conditions, parameter limits and package dimensions without notice. Information furnished hy N.I Scini-fonductors is helie\\ed to he hoth accurnte and reliable at Hie liiiK- nfgoin lo piv^ I luuc\\a-. M Seini-Condnclors assumes no rosponsihilit> lor anv errors or oinis>ion> discovered m its i"ise. XI Si-mi-Cmidiiciors cnculirajics cu-.lonici> lo \\crils lliLit dalavhecN .HV vimx-nt hclore placing orders. Qualify .'Semi-Conductors
Silicon PNP Darlington Power Transistor 2SB1382
ELECTRICAL CHARACTERISTICS
Tj'25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VaF(sat) ICBO IEBO hFE COB fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage •• Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc=-10mA; IB= 0 lc=-8A; lB=-16mA lc=-8A, !B=-16nnA VCB=-120V; IE=0 VEB= -6V; lc= 0 lc= -8A ; VCE= -4V lEsO;VcB=-10V;ftest=1MHz lE=1A;VCE=-12V MIN -120 2000 TYP. 350 MAX -1.5 -2.5 -10 -10 UNIT V V V MA mA PF MHz Switching Times ton tslg tf Turn-on Time Storage Time Fall Time Vcc- -40V, RL= 50 , lc= -8A; !BI= -Ie2= -16mA, 0.8 1.8 1.0 u s u s u s