2SB1369 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

, O na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB1369

DESCRIPTION

  • Collector-Emitter Breakdown Voltage- : V(aR)CEo=-180V(Min)
  • Low Collector Saturation Voltage- : VCE(satf -10V(Max)@ (lc= -0.5A, IB= -50mA)
  • Complement to Type 2SD2061

APPLICATIONS

  • High voltage applications.
  • TV, monitor vertical output application
  • Driver stage application
  • Color TV class B sound output application ABSOLUTE MAXIMUM RATINGS(Ta=25D SYMBOL VCBO VCEO VEBO Ic IB PC Tj .. Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25"C Junction Temperature Storage Temperature VALUE -200 -180 -0.2 150 -55-150 UNIT V V V A A W r ; . 3 PIH: 1 Base

2 Collector

, , - i 3 Emitter " '' TO-220F package B f ' L - - - - o - N - . c - -s-

  • Q "• ' ' "'' H - K • K J • - DIM A B C D F H J K L N Q R U u mm MIN 14.95 10.00 4.40 0.75 3.10 3.70 0.50 13.4 1.10 5.00 2.70 2.20 2.65 6.40 MAX 15.05 10.10 4.60 0.90 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.85 6.60 A N.I Semi-Conductors reserves the right to change tost conditions, parameter limits and package dimensions without notice. Information furnished hy N.I Semi-Coruluctors is believed to he both accurate and reliable at the lime of going in press. llo\\\\e\\er. N.I Seini-Comlnclors assumes no responsibilih Ibr an\\s or omission^ discovered in its use. N I Semi-Conductors encourages customers (o verify that datasheets are current before placing orders. Quality 5emi-Conductors

Silicon PNP Power Transistor 2SB1369

ELECTRICAL CHARACTERISTICS

Tj=25'C unless otherwise specified SYMBOL V(BR)CEO vCE(sat) VeE(on) IGBO IEBO hFE ft PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product CONDITIONS lc=-10mA; IB= 0 lc= -0.5A; IB= -50mA lc= -0.5A; VCE= -5V VCB= -200V; IE= 0 VEB= -5V; lc= 0 lc=-0.4A;VCE=-10V lc= -0.4A; VCE= -10V MIN -180 TYP. t 100 MAX -1.0 -1.0 -1.0 -1.0 240 UNIT V V V MA u A MHz Classifications 70-140 Y 120-240