2SB1369 SAVANTIC
Document overview
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- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1369
DESCRIPTION
- With TO-220 package
- High collector power dissipation
- High current capability
APPLICATIONS
- For general purpose applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector -emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -3 A ICM Collector current-peak -6 A Ta=25 2.0 PC Collector power dissipation TC=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1369 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-1mA; IB=0 -60 V V(BR)CBO Collector-base breakdown voltage I C=-50µA; IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage I E=-50µA; IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-2A ;IB=-0.2A -1.5 V VBEsat Base-emitter saturation voltage I C=-2A; IB=-0.2A -1.5 V ICBO Collector cut-off current V CB=-60V; IE=0 -10 µA IEBO Emitter cut-off current V EB=-4V; IC=0 -10 µA hFE DC current gain I C=-0.5A ; VCE=-5V 100 320 fT Transition frequency I C=-0.5A; VCE=-5V 15 MHz COB Collector output capacitance f=1MHz ; V CB=10V 80 pF
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1369 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)