2SB1366 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
JbE.ml-Conau.cto'i \\J^ioduct±, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB1366
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= -60V(Min)
- Collector Power Dissipation- : Pc= 25 W@ Tc= 25'C
- Low Collector Saturation Voltage- : VCE(sa.f -1.0V(Max)@ (lc= -2A, IB= -0.2A)
- Complement to Type 2SD2058
APPLICATIONS
- Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25cC) SYMBOL VCBO VCEO VEBO Ic IB PC Tj ' Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @Ta=25'C Collector Power Dissipation @Tc=25r Junction Temperature Storage Temperature VALUE -60 -60 -0.5 150 -55-150 UNIT V V V A A W r : : ,3 riH: 1 Base
2 Collector
, - , 3 Enitter " " TO-220F package B ] io f : L - - - - D - N - H K DIM A B c D F H J K L N Q R J U - c - - R - J • - u mm MIN 14.95 10.00 4.40 0.75 3.10 3.70 0.50 13.4 1.10 5.00 2.70 2.20 2.65 6.40 MAX 15.05 10.10 4.60 0,90 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.85 6.60 A N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished hy N.I Semi-Conductors is believed to he both accurate and reliable at the time of goiiu to press. I Kmever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors cncourasics customers to verity thai datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SB1366
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VBE(OH) ICBO IEBO hpE-1 hpE-2 COB fi PARAMETER Collector-Emitter Breakdown Voltage' Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -50mA ; IB= 0 lc= -2A; IB= -0.2A lc= -0.5A ; VCE= -5V VCB= -60V ; IE= 0 VEB= -7V; lc= 0 lc= -0.5A ; Vce= -5V lc= -3A ; VCE= -5V IE= 0; VCB= -10V; ftest= 1MHz lc= -0.5A ; VCE= -5V MIN -60 TYP. 150 MAX -1.0 -1.0 -100 -100 200 UNIT V V V MA UA PF MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time Vcc- -30V, RL=15O, IB1= -IB2= -0.2A, 0.4 1.7 0.5 u s u s u s hpE-1 Classifications o 60-120 Y 100-200