2SB1366 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1366
DESCRIPTION
- With TO-220F package
- Complement to type 2SD2058
- Low collector saturation voltage: VCE(SAT)=-1.0V(Max) at IC=-2A,IB=-0.2A
- Collector power dissipation: PC=25W(TC=25℃)
APPLICATIONS
- With general purpose applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -3 A IB Base current -0.5 A Ta=25℃ 2.0 PC Collector dissipation TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-220F) and symbol
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1366 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-50mA ;IB=0 -60 V VCEsat Collector-emitter saturation voltage I C=-2A ;IB=-0.2A -1.0 V VBE Base-emitter on voltage I C=-0.5A;VCE=-5V -1.0 V ICBO Collector cut-off current V CB=-60V; IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-7V; IC=0 -0.1 mA hFE-1 DC current gain I C=-0.5A ; VCE=-5V 60 200 hFE-2 DC current gain I C=-3A ; VCE=-5V 20 fT Transition frequency I C=-0.5A ; VCE=-5V 9.0 MHz COB Collector output capacitance f=1MHz;V CB=-10V 150 pF Switching times ton Turn-on time 0.4 μs ts Storage time 1.7 μs tf Fall time IC=-2.0A IB1=-IB2=-0.2A VCC=-30V ,RL=15Ω 0.5 μs hFE-1 Classifications O Y 60-120 100-200
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1366 PACKAGE OUTLINE Fig.2 Outline dimensions
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1366