2SB1362 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB1362
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO=-150V(Min)
- Wide Area of Safe Operation
- Complement to Type 2SD2053
APPLICATIONS
- Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25t) SYMBOL VCBO VCEO VEBO Ic ICP PC Tj., Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Collector Power Dissipation @ TC=25'C Collector Power Dissipation @ Ta=25'C Junction Temperature Storage Temperature Range VALUE -150 -150 -15 100 2.5 150 -55-150 UNIT V V V A A W t t 1 2 .m^ 'uQif/- ir • J'E;
- V ' H t C t '-i >', B__, Y-» TA DIM A B C D E F G H J K L N Q R S U Y ,'• F~~ i s i m WIN 19.60 15,50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 20.00 1.90 10.89 4.90 3.35 1,995 5.90 9,90 H [H:l )-3P C •*• —-S t^4 — in MA) 20.1 15,7 4.9 1.1 2.1 3.6 3.2 3,4 0.60 20.7 2.2 10.9 5.1 3.4 2.1C 5,1 10.1 Bi En ' I J R Lse Hector itter ackage »> f- G * *-L -«-*-0 -^-N-*' N.I Seini-CoHductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of goinsi to press. I louevcr. N.I Scmi-Condiictors assumes no responsibility for any errors or omissions discovered in its use. N.I Senii-C'ondticiors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SB1362
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL VcE(sat) VBE(on) ICBO IEBO hpE-1 hpE-2 hpE-3 fl COB PARAMETER Collector-Emitter Saturation Voltage Base -Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc= -7A; IB= -0.7A lc= -7A; VCE= -5V VCB=-150V;IE=0 VEB= -3V; lc= 0 lc= -20mA; VCE= -5V lc=-1A;VCE=-5V lc= -7A; VCE= -5V lc=-0.5A;VCE=-5V;f=1MHz lE=0;VCa=-10V;f=1MHz MIN TYP. 270 MAX -2.0 -1.8 -50 -50 200 UNIT V V M A U A MHz PF hFE.2Classifications Q 60-120 S 80-160 P 100-200