2SB1362 SAVANTIC
Document overview
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- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1362
DESCRIPTION
- With TO-3PN package
- Wide area of safe operation
- Complement to type 2SD2053
APPLICATIONS
- For high power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -9 A ICM Collector current -peak -15 A PC Collector power dissipation T C=25 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1362 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-25mA; IB=0 -150 V VCEsat Collector-emitter saturation voltage I C=-7A; IB=-0.7A -2.0 V VBE Base-emitter on voltage I C=-7A;VCE=-5V -1.8 V ICBO Collector cut-off current V CB=-150V; IE=0 -50 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -50 µA hFE-1 DC current gain I C=-20mA ; VCE=-5V 20 hFE-2 DC current gain I C=-1A ; VCE=-5V 60 200 hFE-3 DC current gain I C=-7A ; VCE=-5V 15 fT Transition frequency I C=-0.5A ; VCE=-5V 15 MHz COB Collector output capacitance f=1MHz;V CB=-10V 270 pF hFE-2 Classifications Q P 60-120 100-200
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1362 PACKAGE OUTLINE Fig.2 outline dimensions