2SB1362 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1362
DESCRIPTION
- With TO-3PN package
- Wide area of safe operation
- Complement to type 2SD2053
APPLICATIONS
- For high power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -9 A ICM Collector current -peak -15 A PC Collector power dissipation TC=25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PN) and symbol
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1362 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-25mA; IB=0 -150 V VCEsat Collector-emitter saturation voltage I C=-7A; IB=-0.7A -2.0 V VBE Base-emitter on voltage I C=-7A;VCE=-5V -1.8 V ICBO Collector cut-off current V CB=-150V; IE=0 -50 μA IEBO Emitter cut-off current V EB=-5V; IC=0 -50 μA hFE-1 DC current gain I C=-20mA ; VCE=-5V 20 hFE-2 DC current gain I C=-1A ; VCE=-5V 60 200 hFE-3 DC current gain I C=-7A ; VCE=-5V 15 fT Transition frequency I C=-0.5A ; VCE=-5V 15 MHz COB Collector output capacitance f=1MHz;V CB=-10V 270 pF hFE-2 Classifications Q P 60-120 100-200
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1362 PACKAGE OUTLINE Fig.2 outline dimensions