2SB1361 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1361
DESCRIPTION
- Collector-Emitter Breakdown Voltage- :V(BR)CEo=-150V(Min)
- Wide Area of Safe Operation
- Complement to Type 2SD2052
APPLICATIONS
- Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICP PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Collector Power Dissipation @ TC=25"C Collector Power Dissipation @ Ta=25"C Junction Temperature Storage Temperature Range VALUE -150 -150 -15 100 150 -55-150 UNIT. V V V A A W C PIN 1.BASE J.COLLECTOR S.ButlTTER TC-SPFa package K T — — D DIM A B C D F H K L N R S T mm WIN 20,70 14.70 4.80 0,90 3,20 3,70 0,50 16,40 1.90 10.80 5,60 ISO 110 S?0 MAX 21.30 15.30 5.20 1.10 3.40 4.30 0.70 17.00 2.10 11.00 6,00 2,20 350 __»3o_ NJ Sonii-Cundiictors reserves the right to change tost conditions, parameter limits anil packuge dimensions without notice. Information furnished by NJ Scmi-Conductors is believed to he both accurate and reliable at the time ofyoin In press. I louever. N.I Semi-Conductors assumes no responsibility lor an> errors or omissions discovered in its use, N.I Semi-Conductors encourages customers lo verily that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SB1361
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL VcE(sat) VBE(on) ICBO IEBO hpE-1 hpE-2 hFE-3 fl COB PARAMETER Collector-Emitter Saturation Voltage Base -Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc= -7A; IB= -0.7A lc= -7A; VCE= -5V VCB=-150V;IE=0 VEEF -3V; lc= 0 lc= -20mA; VCE= -5V lc= -1A; VCE= -5V lc= -7A; VCE= -5V lc= -0.5A; VCE= -5 V; f= 1MHz lE=0;VCB=-10V;f=lMHz MIN TYP. 270 MAX -2.0 -1.8 -50 -50 200 UNIT V V M A MA MHz pF hFE-2Classifications Q 60-120 S 80-160 P 100-200