2SB1361 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1361
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= -150V(Min)
- Wide Area of Safe Operation
- Complement to Type 2SD2052
APPLICATIONS
- Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -9 A ICP Collector Current-Pulse -15 A Collector Power Dissipation @ TC=25℃ 100 PC Collector Power Dissipation @ T a=25℃ 3 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1361
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -0.7A B -2.0 V VBE(on) Base -Emitter On Voltage IC= -7A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -150V; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -20mA; VCE= -5V 20 hFE-2 DC Current Gain IC= -1A; VCE= -5V 60 200 hFE-3 DC Current Gain IC= -7A; VCE= -5V 20 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5 V; f= 1MHz 15 MHz COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 270 pF hFE-2Classifications Q S P 60-120 80-160 100-200 isc Website：www.iscsemi.cn 2