2SB1361 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2052 n Features l Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics l Wide area of safe operation (ASO) l High transition frequency fT l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –150 –150 –15 100 150 –55 to +150 Unit V V V A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE1 hFE2 * hFE3 V BE V CE(sat) fT C ob Conditions V CB = –150V , IE = 0 V EB = –3V , IC = 0 V CE = –5V , IC = –20mA V CE = –5V , IC = –1A V CE = –5V , IC = –7A V CE = –5V , IC = –7A IC = –7A, IB = – 0.7A V CE = –5V , IC = – 0.5A, f = 1MHz V CB = –10V , IE = 0, f = 1MHz min typ 270 max –50 –50 200 –1.8 –2.0 Unit mA mA V V MHz pF TC =25°C Ta=25°C *hFE2 Rank classification Rank Q S P hFE2 60 to 120 80 to 160 100 to 200 Unit: mm 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) 15.0–0.3 21.0–0.516.2–0.5 12.5 Solder Dip 3.5 0.715.0–0.2 5.0–0.2 11.0–0.2 10.9–0.5 5.45–0.3 321 1.1–0.1 2.0–0.2 0.6–0.2 2.0–0.1 f3.2–0.1 3.2
PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I C C ob —V CB Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 120 100 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (PC =3W) (1) (2) (3) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –12 –10 TC =25˚C –200mA –150mA –100mA –80mA –60mA –40mA –20mA –10mA IB=–300mA Collector to emitter voltage VCE (V) Collector current IC (A) 0– 3 –2–1 –12 –10 VCE =–5V TC =–25˚C 100˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 25˚C TC =100˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 1000 100 300 VCE =–5V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1000 100 300 VCE =–5V f=1MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 10000 1000 100 300 3000 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 t=10ms 100ms ICP IC Non repetitive pulse TC =25˚C DC Collector to emitter voltage VCE (V) Collector current IC (A)
R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 0.1 100 10000 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V · 0.3A (3W) and without heat sink (2) PT=10V · 1.0A (10W) and with a 100 · 100 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)