2SB1361 SAVANTIC
Document overview
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- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1361
DESCRIPTION
- With TO-3PFa package
- Complement to type 2SD2052
- High transition frequency
- Wide area of safe operation
APPLICATIONS
- For high power amplification PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -9 A ICP Collector current-peak -15 A TC=25 100 PC Collector power dissipation W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1361 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT VCEsat Collector-emitter saturation voltage I C=-7A ;IB=-0.7A -2.0 V VBE Base-emitter on voltage I C=-7A ; VCE=-5V -1.8 V ICBO Collector cut-off current V CB=-150V; IE=0 -50 µA IEBO Emitter cut-off current V EB=-3V; IC=0 -50 µA hFE-1 DC current gain I C=-20mA ; VCE=-5V 20 hFE -2 DC current gain I C=-1A ; VCE=-5V 60 200 hFE -3 DC current gain I C=-7A ; VCE=-5V 20 COB Output capacitance I E=0 ; VCB=-10V;f=1MHz 270 pF fT Transition frequency I C=-0.5A ; VCE=-5V;f=1MHz 15 MHz hFE-2 classifications R Q P 40-80 60-120 100-200
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1361 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)