2SB1351 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPDarlingtonPowerTransistor 2SB1351
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=-60V(Min)
- HighDCCurrentGain- :hFE=2000(Min)@IC=-10A
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
APPLICATIONS
- Driverforprinterhead solenoid, relay andmotorand generalpurpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -60 V VCEO Collector-EmitterVoltage -60 V VEBO Emitter-BaseVoltage -6 V IC CollectorCurrent-Continuous -12 A ICP CollectorCurrent-Pulse -20 A IB BaseCurrent-Continuous -1 A PC CollectorPowerDissipation @TC=25℃ 30 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPDarlingtonPowerTransistor 2SB1351 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-10mA;IB=0 -60 V VCE(sat) Collector-EmitterSaturationVoltage IC=-10A;IB=-20mA -1.5 V VBE(sat) Base-EmitterSaturationVoltage IC=-10A;IB=-20mA -2.0 V ICBO CollectorCutoffCurrent VCB=-60V;IE=0 -10 μA IEBO EmitterCutoffCurrent VEB=-6V;IC=0 -10 mA hFE DCCurrentGain IC=-10A;VCE=-4V 2000 COB OutputCapacitance IE=0;VCB=-10V;ftest=1.0MHz 170 pF fT Current-Gain—BandwidthProduct IE=1A;VCE=-12V 130 MHz SwitchingTimes ton Turn-onTime IC=-10A;IB1=-IB2=-20mA, VCC= -40V,RL=4Ω 0.7 μs tstg StorageTime 1.5 μs tf FallTime 0.6 μs