2SB1343 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
ducts., O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor 2SB1343
DESCRIPTION
- Collector-Emitter Breakdown Voltage- :V(BR)CEo=-100V(Min)
- High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, lc= -2A)
APPLICATIONS
- Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak t Collector Power Dissipation @Ta=25C Collector Power Dissipation @TC-25'C Junction Temperature Storage Temperature VALUE -100 -100 -10 150 -55-150 UNIT V V V A A W s i f ' ~' TO r^J ,
1 L-' w
- -• =M; :»: 1 Base
2 Collector
3 Emitter
-220C package f 4iQ U k AT ! * " B -1 -« V »l ^Gry !-lfi K ' | , II H c c 1 r ''^ j ntM A B l_. D F G K j K L R S Ij V -' 1 L D mm MIN 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13. 1.10 2.70 2.30 1.29 <>.45 8.66 MAX 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1,35 (>.65 8.86 — 1 »M- J R-« N.I Semi-Conductors reserves the right tw change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of aoin 10 press. I kmever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N I Semi-Conductors encourages customers to verily that datasheets are current before plnchm orders. Quality 5emi-Conductors
Silicon PNP Darlington Power Transistor 2SB1343
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VcE(sat) ICBO IEBO hFE COB fy PARAMETER Collector-Emitter Breakdown Voltage '" Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc=-10mA; IB= 0 lc= -50u A; !E= 0 lc= -3A; IB- -6mA VCB=-100V; IE=0 VEB= -5V; lc= 0 lc= -2A ; VCE= -3V . !E= 0; VCB= -10V; ftesi= 1MHz IE=0,5A;VCE= -5V; f,est= 10MHz MIN -100 -100 1000 TYP. MAX -1.5 -10 20000 UNIT V V V M A mA PF MHz