2SB1343 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1343
DESCRIPTION
- With TO-220C package
- High DC current gain
- Low saturation voltage
- DARLINGTON
APPLICATIONS
- For low frequency power amplifier and power driver applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector -emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -8 A ICM Collector current-peak -10 A Ta=25 2 PC Collector power dissipation TC=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1343 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-5mA; IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-50µA; IE=0 -100 V VCEsat Collector-emitter saturation voltage I C=-3A ;IB=-6mA -1.0 -1.5 V ICBO Collector cut-off current V CB=-100V; IE=0 -10 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -3.0 mA hFE DC current gain I C=-2A ; VCE=-3V 1000 20000 fT Transition frequency I C=-0.5A ; VCE=-5V 12 MHz COB Output capacitance I E=0 ; VCB=-10V;f=1MHz 90 pF
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1343 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm)