2SB1342 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
<^Emi-tonaucto'i L/^ , One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor 2SB1342
DESCRIPTION
- uarnngion connection Tor a nign npe-
- Built-in resistor between base and emitter.
- Complement to Type 2SD1933.
APPLICATIONS
- Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VcBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @Ta=25"C Collector Power Dissipation @TC=25 C Junction Temperature Storage Temperature VALUE -80 -80 150 -55-150 UNIT V V V A A W
- •2 '"£• '?: L PIH: \\e
2 Collector
. .. 3 Knitter ' •' TO-220F package f L • - ~ - D - H • - C - -s- Q '•' ' H - R - K J . - DIM A B D F H J K L N R S U u mm MIN 14.95 10.00 4.40 0.75 3.10 3.70 0.50 13.4 1.10 5.00 2.70 2.20 2.65 6.40 MAX 15.05 10.10 4 GO 0.90 3.30 3.90 0.70 1 3.6 1.30 5.20 2.90 2.40 2.85 6.60 A N.I Semi-Couductors reserves the right to change test conditions, parameter limits and package dimensions \\\\ithont notice. Information furnished by N.I Semi-Conductors is believed to he both iiccurate and reliable at the time of i>oiiu lo press. I louevcr, N.I Senii-C'oiuliieUirs assumes no responsibility for any errors or omissions discovered in its use. N.i Semi-t'ondtictors enciuirii!>es customers to verily that datasheets are current before plaeinu orders. Quality Semi-Conductors
Silicon PNP Darlington Power Transistor 2SB1342
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VcE(sat) ICBO IEBO I>E COB ft PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -1mA; IB= 0 lc= -50u A; IE= 0 lc= -2A; IB= -4mA VCB= -80V ; IE= 0 VEB= -5V; lc= 0 lc= -2A ; VCE= -3V lE=0;VcB=-10V;ftes,= 1MHz IE= 0.5A ; VCE= -5V; f|est= 10MHz MIN -80 -80 1000 TYP. MAX -1.5 -100 10000 UNIT V V V M A mA PF MHz