2SB1341 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1341

DESCRIPTION

  • Collector-Emitter Breakdown Voltage- : V(BR)CEo= -SOV(Min)
  • High DC Current Gain- : hFE- 1000(Min)@ (VCE= -3V, lc= -2A)

APPLICATIONS

  • Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @Ta=25 C Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature VALUE -80 -80 150 -55-150 UNIT V V V A A W
  • T p^^ -v 5 | • \\: TO-2!
  • /rT7

1 Base

2 Collector

3 Emitter

?OC package T U 1 A » f "" B *1 ' H ] 1 K »! c i c i or. DIM A B c D F H v K L R S u -fr mm MM 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 (>.45 ffM MAX 15.90 10,20 4.50 0.90 j.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6,f>5 8.86 - s

  • •r-1 J N.I Seini-Ciimluctors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of going lo press. I hmever. N.I Semi-Conductors assumes no responsibility I'or an> errors or omissions discovered in its use. N.I Semi-Conductors ciicour.-i.ucs customers to verily that datasheets are current before placing orders. Quality Semi-Conductors

Silicon PNP Darlington Power Transistor 2SB1341

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified SYMBOL VIBRICEO V(8R)CBO VcE(sat) ICBO IEBO hpE COB fi PARAMETER Collector-Emitter Breakdown Voltage. Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -1mA; IB= 0 lc= -50u A; IE= 0 lc= -2A; IB= -4mA VCB= -80V ; IE= 0 VEB= -5V; lc= 0 lc= -2A ; VCE= -3V lE=0;VcB=-10V;ftest=1MHz IE= 0.5A ; VCE= -5V; f(est= 10MHz WIN -80 -80 1000 TYP. MAX -1.5 -100 10000 UNIT V V V M A mA PF MHz