2SB1341 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1341
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= -80V(Min)
- High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A)
APPLICATIONS
- Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A Collector Power Dissipation @Ta=25℃ 2 PC Collector Power Dissipation @TC=25℃ 35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1341
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 B -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -4mA B -1.5 V μA ICBO Collector Cutoff Current VCB= -80V ; IE= 0 -100 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA hFE DC Current Gain IC= -2A ; VCE= -3V 1000 10000 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 45 pF fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -5V; ftest= 10MHz 12 MHz isc Website：www.iscsemi.cn 2