2SB1335 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1335 DESCRIPTION ·
- With TO-220Fa package
- Complement to type 2SD1855
- Low collector saturation voltage
APPLICATIONS
- For low frequency power amplifier
1 Emitter
2 Collector
3 Base
Absolute maximum ratings(Ta=25 SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector -emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -4 A PC Collector power dissipation TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1335 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-1mA; IB=0 -60 V V(BR)CBO Collector-base breakdown voltage I C=-50μA; IE=0 -80 V V(BR)EBO Collector-emitter breakdown voltage I E=-50μA; IC=0 -6 V VCEsat Collector-emitter saturation voltage I C=-3A ;IB=-0.3A -1.0 V VBEsat Base-emitter saturation voltage I C=-3A ;IB=-0.3A -1.5 V ICBO Collector cut-off current V CB=-80V; IE=0 -10 μA IEBO Emitter cut-off current V EB=-6V; IC=0 -10 μA hFE DC current gain I C=-1A ; VCE=-5V 60 320 fT Transition frequency I C=-0.5A; VCE=-5V 12 MHz COB Collector output capacitance f=1MHz ; V CB=-10V 100 pF hFE Classifications D E F 60-120 100-200 160-320
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1335 PACKAGE OUTLINE F i g . 2 O u t l i n e d i m e n s i o n s ( u n i n d i c a t e d t o l e r a n c e : ±0.15 mm)