2SB1334 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
J CX EIIEU ioaucki, U nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB1334
DESCRIPTION
- High Collector Current:: lc= -4A
- Low Collector Saturation Voltage :VCE(satr-1.5V(Max)@lc=-3A
- Wide Area of Safe Operation
- Complement to Type 2SD1778
APPLICATIONS
- Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ Tc=25t' Junction Temperature Storage Temperature Range VALUE -80 -60 150 -55-150 UNIT V V V A A W \\ . t - FIH: 1 Base
2 Collector
3 Emitter
T MQ A » * K T , c~l I "-'•i|- r-0"y , f H c r "r° - h J CIM A B C D F G K j K L a R s u V mm MIH 15,50 9.90 4.20 0.70 3.40 4.08 2.68 0.44 13.00 1.10 2.70 2.30 1.20 6.45 8.66 MAX 15.00 10.20 i,5Q 0.00 3,70 5.18 2.90 0.30 13.40 1.45 2.90 2.70 1.35 6.65 8.86 M N.1 Soini-Couductors reserves the right lo change test conditions, parameter limits and package dimensions without notiix. Information furnished by N.I Semi-Condnetors is believed to he both accurate and reliable al the time ofyuinc to press. I hmeKT. N.I Seiiii-Condiietors assumes no responsihilily lor an> errors or omissions discovered in its use." N.I Senii-C'onductors encdurages euslomcrs to verily thai datasheets are current before placing orders. Qualify Semi-Conductors
Silicon PNP Power Transistor 2SB1334
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BRiceo V(BR)CBO V(BR)EBO VcE(sat) VeE(sat) ICBO IEBO HFE COB fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc=-1mA; IB=0 lc= -50^ A; IE= 0 le= -50(J A; lc= 0 ' lc= -3A; IB= -0.3A lc= -3A; IB- -0.3A VCB= -80V; IE= 0 VEB= -4V; lc= 0 lc= -1A; VCE= -5V lE=0;VCB=-10V;f= 1MHz IE= 0.5A; VCE= -5V MIN -60 -80 TYP. 100 MAX -1.5 -1.5 -10 -10 320 UNIT V V V V V u A u A PF MHz hFE Classifications D 60-120 E 100-200 F 160-320