2SB1334 SAVANTIC
Document overview
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1334
DESCRIPTION
- With TO-220 package
- Complement to type 2SD1778
- Wide area of safe operation
- Low collector saturation voltage
APPLICATIONS
- Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector- emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -4 A ICM Collector current-peak -6 A PC Collector power dissipation T C=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1334 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-1mA ,IB=0 -60 V V(BR)CBO Collector-base breakdown voltage I C=-50µA ,IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-50µA ,IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-3A; IB=-0.3A -1.5 V VBEsat Base-emitter saturation voltage I C=-3A; IB=-0.3A -1.5 V ICBO Collector cut-off current V CB=-80V; IE=0 -10 µA IEBO Emitter cut-off current V EB=-4V; IC=0 -10 µA hFE DC current gain I C=-1A ; VCE=-5V 60 320 COB Output capacitance I E=0 ; VCB=-10V,f=1MHz 100 pF fT Transition frequency I E=0.5A ; VCE=-5V 12 MHz hFE Classifications D E F 60-120 100-200 160-320
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1334 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)